ne851m13 nec's npn silicon transistor ? new miniature m13 package: ? small transistor outline ? 1.0 x 0.5 x 0.5 mm ? low profile / 0.50 mm package height ? flat lead style for better rf performance ? ideal for 3 ghz oscillators ? low phase noise ? low pushing factor features outline dimensions (units in mm) package outline m13 part number ne851m13 eiaj 1 registered number 2sc5801 package outline m13 symbols parameters and conditions units min typ max f t gain bandwidth at v ce = 1 v, i c = 5 ma, f = 2 ghz ghz 3.0 4.5 ? f t gain bandwidth at v ce = 1 v, i c = 15 ma, f = 2 ghz ghz 5.0 6.5 |s 21e | 2 insertion power gain at v ce = 1 v, i c = 5 ma, f = 2 ghz db 3.0 4.0 ? |s 21e | 2 insertion power gain at v ce = 1 v, i c = 15 ma, f = 2 ghz db 4.5 5.5 ? nf noise figure at v ce = 1 v, i c = 10 ma, f = 2 ghz db ? 1.9 2.5 c re reverse transfer capacitance 3 at v cb = 0.5 v, i e = 0 ma, f = 1 mhz pf ? 0.6 0.8 i cbo collector cutoff current at v cb = 5 v, i e = 0 na ? ? 600 i ebo emitter cutoff current at v eb = 1 v, i c = 0 na ? ? 600 h fe dc current gain 2 at v ce = 1 v, i c = 5 ma 100 120 145 electrical characteristics (t a = 25 c) notes: 1. electronic industrial association of japan. 2. pulsed measurement, pulse width 350 s, duty cycle 2 %. 3. collector to base capacitance when the emitter is grounded description nec's ne851m13 transistor is designed for oscillator applica- tions up to 3 ghz. the ne851m13 features low voltage operation, low phase noise, and high immunty to pushing effects. nec's new low profile/flat lead style "m13" package is ideal for today's portable wireless applications. california eastern laboratories 1. emitter 2. base 3. collector pin connections 0.125 +0.1 ?0.05 0.50.05 0.1 0.1 0.2 +0.1 ?0.05 0.35 0.7 0.35 0.15 +0.1 ?0.05 0.15 +0.1 ?0.05 1.0 +0.1 ?0.05 0.5 +0.1 ?0.05 0.70.05 1 2 3 e7 0.3 0.2 0.2 (bottom view)
notes: 1. operation in excess of any one of these parameters may result in permanent damage. 2. with device mounted on 1.08 cm 2 x 1.0 mm glass epoxy board. symbols parameters units ratings v cbo collector to base voltage v 9 v ceo collector to emitter voltage v 5.5 v ebo emitter to base voltage v 1.5 i c collector current ma 100 p t 2 total power dissipation mw 140 t j junction temperature c 150 t stg storage temperature c -65 to +150 absolute maximum ratings 1 (t a = 25 c) ambient temperature, t a ( c) total power dissipation, p tot (mw) total power dissipation vs. ambient temperature typical performance curves (t a = 25 c) collector to base voltage, v cb (v) reverse transfer capacitance, c re (pf) reverse transfr capacitance vs. collector to base voltage 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 mounted on glass epoxy pcb (1.08 cm2 ? 1.0mm(t) ) f = 1 mhz 1.0 0.8 0.6 0.4 0.2 0 123456789 ne851m13 v ce = 2 v 100 80 60 40 20 0 0.2 0.4 0.6 0.8 1.0 base to emitter voltage, v be (v) collector current, i c (ma) collector current vs. base to emitter voltage part number quantity NE851M13-T3-A 10 k pcs./reel ordering information collector current, i c (ma) collector to emitter voltage, v ce (v) collector current vs. collector to emitter voltage 60 30 40 50 10 20 01234 56 7 i b = 40 a 320 a 280 a 240 a 200 a 160 a 120 a 80 a 360 a 400 a
typical performance curves (t a = 25 c) ne851m13 collector current, i c (ma) gain bandwidth product, f t (ghz) gain bandwidth product vs. collector current v ce = 1 v f = 2 ghz 10 8 6 4 2 0 10 1 100 10 8 6 4 2 0 1 10 100 v ce = 2 v f = 2 ghz gain bandwidth product, f t (ghz) collector current, i c (ma) gain bandwidth product vs. collector current frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency v ce = 1 v i c = 5 ma 35 20 25 30 5 10 15 0 0.1 1 10 frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency 35 30 25 20 15 10 5 0 0.1 1 10 v ce = 2 v i c = 5 ma insertion power gain vs. frequency v ce = 1 v i c = 15 ma 35 20 25 30 5 10 15 0 0.1 1 10 frequency, f (ghz) insertion power gain, |s 21e | 2 (db) insertion power gain vs. frequency frequency, f (ghz) insertion power gain, |s 21e | 2 (db) v ce = 2 v i c = 15 ma 35 20 25 30 5 10 15 0 0.1 1 10
ne851m13 typical performance curves (t a = 25 c) collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current v ce = 1 v f = 1 ghz 20 15 5 10 0 1 10 100 mag msg |s 21e | 2 |s21e| 2 mag msg v ce = 2 v f = 1 ghz 20 15 10 5 0 1 10 100 collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current v ce = 1 v f = 2 ghz 15 10 0 5 -5 1 10 100 mag |s 21e | 2 mag v ce = 2 v f = 2 ghz 15 10 5 0 -5 1 10 100 |s 21e | 2 collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) insertion power gain and mag vs. collector current v ce = 1 v f = 4 ghz 10 5 -5 0 -10 1 10 100 mag msg |s 21e | 2 collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) insertion power gain and mag vs. collector current collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current v ce = 2 v f = 4 ghz 10 5 -5 0 -10 1 10 100 mag msg |s 21e | 2 collector current, i c (ma) insertion power gain, |s 21e | 2 (db) maximum available gain, mag(db) maximum stable gain, msg(db) insertion power gain, mag, msg vs. collector current
typical performance curves (t a = 25 c) ne851m13 collector current, i c (ma) noise figure, nf (db) noise figure and associated gain vs. collector current 6 5 4 3 2 1 0 18 15 12 9 6 3 0 1 10 100 v ce = 1 v f = 1 ghz nf g a associated gain, g a (db) nf g a v ce = 2 v f = 1 ghz 6 5 4 3 2 1 10 100 0 1 0 3 6 9 12 15 19 noise figure, nf (db) collector current, i c (ma) noise figure and associated gain vs. collector current associated gain, g a (db) 6 5 4 3 2 1 0 18 15 12 9 6 3 0 1 10 100 v ce = 1 v f = 2 ghz nf g a collector current, i c (ma) noise figure, nf (db) noise figure and associated gain vs. collector current associated gain, g a (db) nf g a v ce = 2 v f = 2 ghz 6 5 4 3 2 1 10 100 0 1 0 3 6 9 12 15 18 noise figure, nf (db) collector current, i c (ma) noise figure and associated gain vs. collector current associated gain, g a (db) v ce = 2 v, f = 1 ghz i cq = 5 ma (rf off) 25 20 15 10 5 0 -5 -10 -15 -20 -15 -10 -5 0 5 10 0 10 20 30 40 50 60 70 80 p out i c input power, p in (dbm) output power, p out (dbm) output power and collector current vs. input power collector current, i c (ma) 25 20 15 10 5 0 -5 -10 -15 -20 -15 -10 -5 0 5 10 80 70 60 50 40 30 20 10 0 p out i c v ce = 2 v, f = 2 ghz i cq = 5 ma (rf off) input power, p in (dbm) output power, p out (dbm) output power and collector current vs. input power collector current, i c (ma)
ne851m13 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m13 v c = 1 v, i c = 5 ma 0.100 0.831 -46.49 13.764 152.54 0.036 66.4 0.901 -23.1 0.068 25.83 0.200 0.789 -81.92 11.335 132.55 0.058 50.3 0.742 -38.6 0.134 22.93 0.300 0.765 -106.07 9.135 118.99 0.069 40.9 0.618 -47.8 0.192 21.23 0.400 0.750 -122.16 7.476 109.52 0.075 35.5 0.533 -53.5 0.250 20.01 0.500 0.706 -133.99 6.157 103.05 0.077 33.0 0.460 -53.3 0.394 19.04 0.600 0.699 -142.06 5.251 97.76 0.078 31.6 0.414 -55.7 0.478 18.26 0.700 0.697 -148.74 4.576 93.13 0.080 31.0 0.382 -58.2 0.551 17.59 0.800 0.696 -153.88 4.062 89.34 0.081 31.4 0.363 -59.5 0.619 17.02 0.900 0.697 -158.33 3.646 85.83 0.082 32.0 0.350 -61.5 0.682 16.51 1.000 0.697 -161.97 3.308 82.71 0.082 33.1 0.339 -63.3 0.751 16.05 1.500 0.704 -174.56 2.262 69.58 0.087 41.9 0.328 -74.5 1.012 13.47 2.000 0.712 176.89 1.721 59.12 0.098 53.1 0.342 -86.9 1.152 10.09 2.500 0.724 169.88 1.391 50.09 0.118 62.5 0.376 -98.8 1.122 8.58 3.000 0.732 163.33 1.166 42.52 0.147 68.6 0.415 -109.4 1.042 7.75 3.500 0.743 156.42 1.002 36.21 0.182 71.3 0.458 -117.8 0.939 7.41 4.000 0.746 150.06 0.879 31.47 0.222 71.8 0.498 -125.3 0.877 5.98 j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s 11 0.100 to 4.000 ghz by 0.050 +90? +45? +135? +180? 1 8 6 4 2 -135? -90? -45? 0? s12 s21 0.100 to 4.000ghz by 0.050 note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain
ne851m13 typical scattering parameters (t a = 25 c) frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m13 v c = 2 v, i c = 10 ma 0.100 0.718 -62.67 22.758 144.89 0.029 61.8 0.823 -32.5 0.135 28.99 0.200 0.689 -102.19 16.867 123.83 0.042 47.7 0.615 -50.6 0.239 26.05 0.300 0.680 -124.30 12.737 111.69 0.048 42.0 0.486 -60.3 0.334 24.22 0.400 0.677 -137.54 10.068 103.82 0.052 40.1 0.408 -66.1 0.423 22.85 0.500 0.648 -147.55 8.180 98.85 0.055 40.8 0.335 -65.2 0.582 21.74 0.600 0.645 -153.87 6.913 94.59 0.057 41.9 0.296 -67.9 0.679 20.81 0.700 0.647 -158.99 5.980 90.88 0.060 43.5 0.270 -70.9 0.755 19.98 0.800 0.648 -162.97 5.282 87.80 0.063 45.4 0.253 -72.1 0.819 19.23 0.900 0.651 -166.43 4.725 84.93 0.066 47.2 0.243 -74.0 0.871 18.55 1.000 0.652 -169.32 4.275 82.38 0.069 49.2 0.234 -75.8 0.922 17.92 1.500 0.661 -179.34 2.907 71.36 0.087 57.6 0.226 -86.3 1.059 13.75 2.000 0.669 173.47 2.212 62.32 0.109 63.9 0.241 -97.3 1.097 11.18 2.500 0.679 167.37 1.795 54.17 0.135 67.6 0.274 -107.0 1.061 9.73 3.000 0.687 161.58 1.515 47.00 0.164 69.6 0.311 -115.5 1.013 8.96 3.500 0.696 155.30 1.313 40.58 0.197 70.1 0.353 -121.7 0.947 8.24 4.000 0.699 149.56 1.161 35.18 0.232 69.6 0.393 -127.3 0.901 6.99 note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s11 0.100 to 4.000ghz by 0.050 +90? +45? +135? +180? 1 8 6 4 2 -135? -90? -45? 0? s12 s21 0.100 to 4.000ghz by 0.050
ne851m13 typical scattering parameters (t a = 25 c) note: 1. gain calculations: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , mag = maximum available gain msg = maximum stable gain frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) ne851m13 v c = 3 v, i c = 20 ma 0.100 0.592 -86.11 33.025 135.40 0.022 57.5 0.710 -44.7 0.243 31.86 0.200 0.610 -124.37 21.656 115.31 0.031 48.3 0.483 -65.2 0.402 28.50 0.300 0.620 -141.71 15.554 105.23 0.036 47.6 0.370 -75.9 0.532 26.41 0.400 0.626 -151.34 12.032 98.91 0.040 49.1 0.309 -82.6 0.635 24.80 0.500 0.610 -159.31 9.710 95.19 0.044 52.1 0.241 -83.3 0.781 23.47 0.600 0.610 -163.96 8.162 91.77 0.048 54.4 0.212 -87.6 0.862 22.32 0.700 0.613 -167.68 7.032 88.75 0.052 56.5 0.194 -92.2 0.917 21.29 0.800 0.615 -170.58 6.194 86.21 0.057 58.6 0.181 -94.3 0.956 20.36 0.900 0.620 -173.15 5.529 83.82 0.062 60.3 0.173 -96.9 0.983 19.53 1.000 0.621 -175.39 4.996 81.67 0.067 61.8 0.167 -99.4 1.010 18.15 1.500 0.632 176.71 3.387 72.14 0.092 66.6 0.166 -109.9 1.059 14.16 2.000 0.639 170.54 2.578 64.13 0.119 69.0 0.183 -118.5 1.064 11.79 2.500 0.648 165.15 2.096 56.72 0.148 69.7 0.214 -124.5 1.035 10.35 3.000 0.654 159.90 1.775 50.03 0.178 69.5 0.248 -129.5 1.005 9.56 3.500 0.662 154.05 1.546 43.87 0.210 68.7 0.285 -132.5 0.963 8.68 4.000 0.664 148.76 1.376 38.44 0.243 67.5 0.321 -135.5 0.929 7.54 j50 j25 j10 0 10 25 -j10 -j25 -j50 -j100 j100 0 50 100 0 s22 s11 0.100 to 4.000ghz by 0.050 +90? +45? +135? +180? 1 8 6 4 2 -135? -90? -45? 0? s12 s21 0.100 to 4.000ghz by 0.050
schematic nonlinear model ne851m13 base emi tt er c o llec to r l bpk g 0 . 05 nh l b 0 . 25 nh l epk g 0 . 05 nh l e 0 .4 5 nh l cpk g 0 . 05 nh c cbpk g 0 . 05 pf c cb 0 . 01 pf c ce 0 . 25 pf c cepk g 0 . 05 pf q 1 parameters q1 parameters q1 is 137e-18 mjc 0.14 bf 166 xcjc 0.5 nf 0.9871 cjs 0 vaf 20.4 vjs 0.75 ikf 50 mjs 0 ise 80.4e-15 fc 0.55 ne 2.4 tf 15e-12 br 28.7 xtf 0.1 nr 0.9889 vtf 2 var 2.7 itf 0.03 ikr 0.021 ptf 0 isc 532e-18 tr 1.0e-9 nc 1.28 eg 1.11 re 0.45 xtb 0 rb 4 xti 3 rbm 1 kf 170e-15 irb 0 af 1.65 rc 1.7 cje 2.4e-12 vje 0.87 mje 0.34 cjc 0.65e-12 vjc 0.52 (1) gummel-poon model parameters ne851m13 c cb 0.01 pf c ce 0.25 pf l b 0.25 nh l e 0.45 nh c cbpkg 0.05 pf c cepkg 0.05 pf l bx 0.05 nh l cx 0.05 nh l ex 0.05 nh additional parameters model test conditions frequency: 0.1 to 5.0 ghz bias: v ce = 1 v to 4 v, i c = 1 ma to 40 ma date: 09/2001 bjt nonlinear model parameters (1) life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec com p ound semiconductor devices, ltd . 01/27/2003
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